Gallium Nitride Diode Gan HEMT RF & Microwave And Optical Communication Chips Electronic Components Ic Parts Supply

Product	Frequency	Power	Package
Gallium Nitride Diode GaN HEMT	1.8~3.8G	6W	DFN4540
Gallium Nitride Diode GaN HEMT	1.8~3.8G	15W	DFN4540
Gallium Nitride Diode GaN HEMT	0.5-4G	30W	JY04f050
Gallium Nitride Diode GaN HEMT	0.5~6G	30W	DFN3040
Gallium Nitride Diode GaN HEMT	2.6G	16+32	DFN7065
Gallium Nitride Diode GaN HEMT	3.5G	16+32	DFN7065
Gallium Nitride Diode GaN HEMT	2.6G	32+64	DFN70100
Gallium Nitride Diode GaN HEMT	3.5G	32+64	DNF70100
Gallium Nitride Diode GaN HEMT	5.8G	50W	360
Gallium Nitride Diode GaN HEMT	5.8G	100W	360

						GaN HEMT GN027029P54
GN027029P54 series GaN Internally Matched Power Amplifier
Performance characteristics:
Covering the working frequency band:2.7~2.9GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package

Product introduction:

Electrical performance table:
Working conditions:50Ω test system,TA=+25℃,VDS=+50V,IDS=70mA,pulse width:120us,10% duty cycle.
Parameter	Test Conditions			Minimum		Typically	maximum		Unit
Saturation power	Freq.=2.7GHz~2.9GHz VGS=-3.0~-4.0V VDS=+50V IDsq=70mA			54.2		-	-		dBm
Power Gain				-		15.2	-		dB
Power Added Efficiency				64.2		-	-		%
Power Flatness				-		-	0.3		dB
Pinch-off voltage	VDS=6V		IDS≤100mA	-8		-	-4		V
Gate-source reverse Current	VDS=0V		VGS=-10V	-		-	5		uA
Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar power specifications,higher efficiency and wider bandwidth can be customized.
Working limit parameter:
Source-drain voltage Vds		+120V			wasted power (Tc=25℃)			94W
Gate-source voltage Vgs		-10V			storage temperature			-55℃~+125℃
Operating temperature		-40℃~+75℃			-			-

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